Scozzie, C.J.: search on Z-Library

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1

Investigating corporate social responsibility in supply chains: a SME perspective

Francesco Ciliberti, Pierpaolo Pontrandolfo, Barbara Scozzi

Journal:

Journal of Cleaner Production

Year:

2008

Language:

english

File:

PDF, 224 KB

english, 2008

2

Capturing the Stakeholders’ View in Sustainability Reporting: A Novel Approach

Bellantuono, Nicola, Pontrandolfo, Pierpaolo, Scozzi, Barbara

Journal:

Year:

2016

Language:

english

File:

PDF, 416 KB

english, 2016

3

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

Palmour, J. W., Cheng, L., Pala, V., Brunt, E. V., Lichtenwalner, D. J., Wang, G-Y, Richmond, J., O'Loughlin, M., Ryu, S., Allen, S. T., Burk, A. A., Scozzie, C.

Year:

2014

Language:

english

File:

PDF, 949 KB

english, 2014

4

[IEEE 2012 IEEE Energy Conversion Congress and Exposition (ECCE) - Raleigh, NC, USA (2012.09.15-2012.09.20)] 2012 IEEE Energy Conversion Congress and Exposition (ECCE) - Advanced silicon carbide gate turn-off thyristor for energy conversion and power grid applications

Cheng, Lin, Agarwal, Anant, O'Loughlin, Michael, Capell, Craig, Burk, Al, Palmour, John, Ogunniyi, Aderinto, O'Brien, Heather, Scozzie, Charles

Year:

2012

Language:

english

File:

PDF, 925 KB

english, 2012

5

Knowledge management strategy and organization: a perspective of analysis

Claudio Garavelli, Michele Gorgoglione, Barbara Scozzi

Journal:

Knowledge and Process Management

Year:

2004

Language:

english

File:

PDF, 174 KB

english, 2004

6

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs

Cheng, Lin, Ryu, Sei Hyung, Agarwal, Anant K., O'Loughlin, Michael J., Burk, Albert A., Richmond, Jim, Lelis, Aivars J., Scozzie, Charles J., Palmour, John W.

Journal:

Materials Science Forum

Year:

2012

Language:

english

File:

PDF, 357 KB

english, 2012

7

[IEEE 2014 IEEE Energy Conversion Congress and Exposition (ECCE) - Pittsburgh, PA, USA (2014.9.14-2014.9.18)] 2014 IEEE Energy Conversion Congress and Exposition (ECCE) - 10 kV and 15 kV silicon carbide power MOSFETs for next-generation energy conversion and transmission systems

Pala, Vipindas, Brunt, Edward V., Cheng, Lin, O'Loughlin, Michael, Richmond, Jim, Burk, Albert, Allen, Scott T., Grider, David, Palmour, John W., Scozzie, Charles J.

Year:

2014

Language:

english

File:

PDF, 2.05 MB

english, 2014

8

[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Analysis of SiC BJT RBSOA

Gao, Y., Huang, A.Q., Chen, B., Agarwal, A.K., Krishnaswami, S., Scozzie, C.

Year:

2006

Language:

english

File:

PDF, 2.97 MB

english, 2006

9

High Temperature Characterization of 4H-SiC Bipolar Junction Transistors

Krishnaswami, Sumi, Agarwal, Anant, Richmond, James, Capell, Craig, Ryu, Sei Hyung, Palmour, John W., Geil, Bruce, Katsis, Dimos, Scozzie, Charles J.

Journal:

Materials Science Forum

Year:

2006

Language:

english

File:

PDF, 310 KB

english, 2006

10

Evaluation of Si and SiC SGTOs for High-Action Army Applications

O'Brien, H., Shaheen, W., Chiscop, V., Scozzie, C.J., Koebke, M.G.

Journal:

IEEE Transactions on Magnetics

Year:

2009

Language:

english

File:

PDF, 778 KB

english, 2009

11

[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - High Speed Switching Devices in 4H-SiC - Performance and Reliability

Sei-Hyung Ryu,, Krishnaswami, S., Hull, B., Heath, B., Das, M., Richmond, J., Fatima, H., Jon Zhang,, Agarwal, A., Palmour, J., Lelis, A., Geil, B., Katsis, D., Scozzie, C., Scofield, J.

Year:

2005

Language:

english

File:

PDF, 186 KB

english, 2005

12

The benefits and current progress of SiC SGTOs for pulsed power applications

Aderinto Ogunniyi, Heather O’Brien, Aivars Lelis, Charles Scozzie, William Shaheen, Anant Agarwal, Jon Zhang, Robert Callanan, Victor Temple

Journal:

Solid-State Electronics

Year:

2010

Language:

english

File:

PDF, 1.30 MB

english, 2010

13

4H-SiC Bipolar Junction Transistors with a Current Gain of 108

Zhang, Jon, Jonas, Charlotte, Burk, Al A., Capell, Craig, Young, Jonathan, Callanan, Robert, Agarwal, Anant, Palmour, John W., Geil, Bruce, Scozzie, Charles J.

Journal:

Materials Science Forum

Year:

2009

Language:

english

File:

PDF, 405 KB

english, 2009

14

Static and Dynamic Performance Evaluation of >13 kV SiC-ETO and its Application as a Solid-State Circuit Breaker

Rezaei, Mohammad Ali, Wang, Gang Yao, Huang, Alex Q., Cheng, Lin, Palmour, John W., Scozzie, Charles

Journal:

Materials Science Forum

Year:

2014

Language:

english

File:

PDF, 921 KB

english, 2014

15

Resonance production and decay in pion induced collisions with HADES

Scozzi, Federico, Foka, Y., Brambilla, N., Kovalenko, V.

Journal:

EPJ Web of Conferences

Year:

2017

Language:

english

File:

PDF, 1.28 MB

english, 2017

16

Improving innovation projects by an information-based methodology

Albino, Vito, Pontrandolfo, Pierpaolo, Scozzi, Barbara

Journal:

International Journal of Automotive Technology and Management

Year:

2003

Language:

english

File:

PDF, 351 KB

english, 2003

17

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

Zhang, Qing Chun, Callanan, Robert, Agarwal, Anant, Burk, Albert A., O'Loughlin, Michael J., Palmour, John, Scozzie, Charles

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 745 KB

english, 2010

18

Evaluation of Advanced Si and SiC Switching Components for Army Pulsed Power Applications

O'Brien, Heather, Shaheen, William, Thomas, Jr., Richard L., Crowley, Timothy, Bayne, Stephen B., Scozzie, Charles J.

Journal:

IEEE Transactions on Magnetics

Year:

2007

Language:

english

File:

PDF, 686 KB

english, 2007

19

Evaluation of SiC JFET Performance During Repetitive Pulsed Switching Into an Unclamped Inductive Load

Pushpakaran, Bejoy N., Hinojosa, Miguel, Bayne, Stephen B., Veliadis, Victor, Urciuoli, Damian, El-Hinnawy, Nabil, Borodulin, Pavel, Gupta, Shalini, Scozzie, Charles

Journal:

IEEE Transactions on Plasma Science

Year:

2014

Language:

english

File:

PDF, 1.36 MB

english, 2014

20

Managing Open Innovation in Urban Labs

Scozzi, Barbara, Bellantuono, Nicola, Pontrandolfo, Pierpaolo

Journal:

Group Decision and Negotiation

Year:

2017

Language:

english

File:

PDF, 553 KB

english, 2017

21

Safe Operating Area and Long-Term Reliability of 9-kV Silicon Carbide PNPN Super Gate Turn-Off Thyristors

Lawson, Kevin, Bayne, Stephen B., Lacouture, Shelby, Cheng, Lin, O'Brien, Heather, Ogunniyi, Aderinto, Scozzie, Charles

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 628 KB

english, 2014

22

Influence of Shockley Stacking Fault Generation on Electrical Behavior of 4H-SiC 10 kV MPS Diodes

Zhang, Qing Chun, Agarwal, Anant, Burk, Albert A., O'Loughlin, Michael J., Palmour, John, Stahlbush, Robert E., Scozzie, Charles

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 1.06 MB

english, 2010

23

[IEEE IC's (ISPSD) - San Diego, CA, USA (2011.05.23-2011.05.26)] 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs - 3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications

Ryu, Sei-Hyung, Cheng, Lin, Dhar, Sarit, Capell, Craig, Jonas, Charlotte, Callanan, Robert, Agarwal, Anant, Palmour, John, Lelis, Aivars, Scozzie, Charles, Geil, Bruce

Year:

2011

Language:

english

File:

PDF, 622 KB

english, 2011

24

[IEEE 2015 IEEE Pulsed Power Conference (PPC) - Austin, TX, USA (2015.5.31-2015.6.4)] 2015 IEEE Pulsed Power Conference (PPC) - Extraction of Safe Operating Area and long term reliability of experimental Silicon Carbide Super Gate Turn Off Thyristors

Lacouture, S., Schrock, J. A., Ray, W. B., Hirsch, E. A., Bayne, S., Giesselmann, M., O'Brien, H., Ogunniyi, A., Scozzie, C.

Year:

2015

Language:

english

File:

PDF, 663 KB

english, 2015

25

Different practices for open innovation: a context‐based approach

Schiuma, Giovanni, Bellantuono, Nicola, Pontrandolfo, Pierpaolo, Scozzi, Barbara

Journal:

Journal of Knowledge Management

Year:

2013

Language:

english

File:

PDF, 185 KB

english, 2013

26

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Ryu, Sei Hyung, Hull, Brett A., Dhar, Sarit, Cheng, L., Zhang, Qing Chun, Richmond, Jim, Das, Mrinal K., Agarwal, Anant, Palmour, John, Lelis, Aivars J., Geil, Bruce, Scozzie, Charles

Journal:

Materials Science Forum

Year:

2010

Language:

english

File:

PDF, 771 KB

english, 2010

27

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Ruggedness evaluation of 56mm2, 180 A SiC DMOSFETs as a function of pulse repetition rate for high power applications

Lawson, K., Schrock, J., Ray, W., Bayne, S., Cheng, L., Palmour, J., Allen, S., Scozzie, C.

Year:

2014

Language:

english

File:

PDF, 1.10 MB

english, 2014

28

[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - 4 kV, 10 A Bipolar Junction Transistors in 4H-SiC

Krishnaswami, S., Agarwal, A., Richmond, J., Chow, T.P., Geil, B., Jones, K., Scozzie, C.

Year:

2006

Language:

english

File:

PDF, 4.50 MB

english, 2006

29

27 kV, 20 A 4H-SiC n-IGBTs

van Brunt, Edward, Cheng, Lin, O'Loughlin, Michael J., Richmond, Jim, Pala, Vipindas, Palmour, John, Tipton, Charles W., Scozzie, Charles

Journal:

Materials Science Forum

Year:

2015

Language:

english

File:

PDF, 1.37 MB

english, 2015

30

4H–SiC BJTs with current gain of 110

Qingchun (Jon) Zhang, Anant Agarwal, Al Burk, Bruce Geil, Charles Scozzie

Journal:

Solid-State Electronics

Year:

2008

Language:

english

File:

PDF, 264 KB

english, 2008

31

[IEEE IC's (ISPSD) - Barcelona, Spain (2009.06.14-2009.06.18)] 2009 21st International Symposium on Power Semiconductor Devices & IC's - 4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield

Zhang, Qingchun, Burk, Al, Husna, Fatima, Callanan, Robert, Agarwal, Anant, Palmour, John, Stahlbush, Robert, Scozzie, Charles

Year:

2009

Language:

english

File:

PDF, 315 KB

english, 2009

32

1000-V, 30-A 4H-SiC BJTs with high current gain

Krishnaswami, S., Agarwal, A., Sei-Hyung Ryu,, Capell, C., Richmond, J., Palmour, J., Balachandran, S., Chow, T.P., Bayne, S., Geil, B., Jones, K., Scozzie, C.

Journal:

IEEE Electron Device Letters

Year:

2005

Language:

english

File:

PDF, 239 KB

english, 2005

33

High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

Schrock, James A., Ray II, William B., Lawson, Kevin, Bilbao, Argenis, Bayne, Stephen B., Holt, Shad L., Cheng, Lin, Palmour, John W., Scozzie, Charles

Journal:

IEEE Transactions on Power Electronics

Year:

2015

Language:

english

File:

PDF, 588 KB

english, 2015

34

[IEEE 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Waikoloa, HI, USA (2014.6.15-2014.6.19)] 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - 22 kV, 1 cm2, 4H-SiC n-IGBTs with improved conductivity modulation

Brunt, E. V., Cheng, L., O'Loughlin, M., Capell, C., Jonas, C., Lam, K., Richmond, J., Pala, V., Ryu, S., Allen, S. T., Burk, A. A., Palmour, J. W., Scozzie, C.

Year:

2014

Language:

english

File:

PDF, 950 KB

english, 2014

35

[IEEE 2004 IEEE 35th Annual Power Electronics Specialists Conference - Aachen, Germany (20-25 June 2004)] 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551) - Gummel-Poon model for 1.8 kV SiC high-voltage bipolar junction transistor

Balachandran, S., Chow, T.P., Agarwal, A., Tipton, W., Scozzie, S.

Year:

2004

Language:

english

File:

PDF, 283 KB

english, 2004

36

Characterization of Ti schottky diodes on epi-regrown 4H-SiC

Lin Zhu, Canhua Li, T. Paul Chow, Ishwara B. Bhat, Kenneth A. Jones, C. Scozzie, Anant Agarwal

Journal:

Journal of Electronic Materials

Year:

2006

Language:

english

File:

PDF, 133 KB

english, 2006

37

[IEEE 2013 IEEE Pulsed Power and Plasma Science Conference (PPPS 2013) - San Francisco, CA, USA (2013.06.16-2013.06.21)] 2013 19th IEEE Pulsed Power Conference (PPC) - Pulsed power switching of 4H-SiC vertical D-MOSFET and device characterization

Bilbao, Argenis, Ray, William B., Schrock, James A., Lawson, Kevin, Bayne, Stephen B., Cheng, Lin, Agarwal, Anant K., Scozzie, Charles

Year:

2013

Language:

english

File:

PDF, 1.05 MB

english, 2013

38

Open source software projects as virtual organisations: competency rallying for software development

Crowston, K., Scozzi, B.

Journal:

IEE Proceedings - Software

Year:

2002

Language:

english

File:

PDF, 1.66 MB

english, 2002

39

Inductive switching of 4H-SiC gate turn-off thyristors

Bayne, S.B., Tipton, C.W., Griffin, T., Scozzie, C.J., Geil, B., Agarwal, A.K., Richmond, J.

Journal:

IEEE Electron Device Letters

Year:

2002

Language:

english

File:

PDF, 195 KB

english, 2002

40

ECS Transactions [ECS 220th ECS Meeting - Boston, MA (October 9 - October 14, 2011)] - (Invited) Reliability-Driven SiC Power Device Development for Army Applications

Scozzie, Charles J., Lelis, Aivars, Green, Ronald

Year:

2011

Language:

english

File:

PDF, 519 KB

english, 2011

41

[IEEE 2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC) - Santa Fe, NM, USA (2014.6.1-2014.6.5)] 2014 IEEE International Power Modulator and High Voltage Conference (IPMHVC) - Evaluation of high-voltage, high-power 4H-SiC insulated-gate bipolar transistors

Hinojosa, Miguel, Ogunniyi, Aderinto, O'Brien, Heather, Bayne, Stephen B., Scozzie, Charles

Year:

2014

Language:

english

File:

PDF, 971 KB

english, 2014

42

[IEEE 2007 IEEE Vehicle Power and Propulsion Conference (VPPC) - Arlington, TX, USA (2007.09.9-2007.09.12)] 2007 IEEE Vehicle Power and Propulsion Conference - Large Area Silicon Carbide Vertical Junction Field Effect Transistors for High Temperature Power Conditioning Applications

Veliadis, Victor, McNutt, Ty, McCoy, Megan, Hearne, Harold, Potyraj, Paul, Scozzie, Charles

Year:

2007

Language:

english

File:

PDF, 6.88 MB

english, 2007

43

SiC BJT Technology for Power Switching and RF Applications

Agarwal, Anant, Ryu, Sei Hyung, Capell, Craig, Richmond, James, Palmour, John W., Bartlow, Howard, Chow, T.P., Scozzie, Skip, Tipton, W., Baynes, Stephen, Jones, Kenneth A.

Journal:

Materials Science Forum

Year:

2004

Language:

english

File:

PDF, 742 KB

english, 2004

44

Low‐tech, small‐ and medium‐sized enterprises and the practice of new product development

Lindman, Martti, Scozzi, Barbara, Otero‐Neira, Carmen

Journal:

European Business Review

Year:

2008

Language:

english

File:

PDF, 262 KB

english, 2008

45

Addressing coordination problems in information intensive processes for public management innovation

Celino, Adele, Concilio, Grazia, Pontrandolfo, Pierpaolo, Scozzi, Barbara

Journal:

Transforming Government People Process and Policy

Year:

2008

Language:

english

File:

PDF, 149 KB

english, 2008

46

Splenic Monocytes Promote Neutrophil Extravasation into Lung Grafts via a TLR9-IL1β-Dependent Pathway

Hsiao, H., Takahashi, T., Liu, Y., Scozzi, D., Li, W., Krupnick, A.S., Gelman, A.E., Kreisel, D.

Journal:

The Journal of Heart and Lung Transplantation

Year:

2017

Language:

english

File:

PDF, 100 KB

english, 2017

47

Naive CD4 + T Cells Carrying a TLR2 Agonist Overcome TGF-β–Mediated Tumor Immune Evasion

Ibrahim, Mohsen, Scozzi, Davide, Toth, Kelsey A., Ponti, Donatella, Kreisel, Daniel, Menna, Cecilia, De Falco, Elena, D’Andrilli, Antonio, Rendina, Erino A., Calogero, Antonella, Krupnick, Alexander S

Journal:

The Journal of Immunology

Year:

2017

Language:

english

File:

PDF, 2.06 MB

english, 2017

48

Synthesis and anti-inflammatory evaluation of 3-methylthio-1,2,4-triazines, 3-alkoxy-1,2,4-triazines, and 3-aryloxy-1,2,4-triazines

William P. Heilman, R. D. Heilman, James A. Scozzie, R. J. Wayner, James M. Gullo, Zaven S. Ariyan

Journal:

Journal of Pharmaceutical Sciences

Year:

1980

Language:

english

File:

PDF, 723 KB

english, 1980

49

[IEEE 2009 IEEE Pulsed Power Conference (PPC) - Washington, DC, USA (2009.06.28-2009.07.2)] 2009 IEEE Pulsed Power Conference - High energy density capacitors for pulsed power applications

MacDougall, Fred, Ennis, Joel, Yang, Xiao Hui, Cooper, Robert A., Gilbert, John E., Bates, John F., Naruo, Chip, Schneider, Mark, Keller, Nathan, Joshi, Shama, Jow, T. Richard, Ho, Janet, Scozzie, C.

Year:

2009

Language:

english

File:

PDF, 513 KB

english, 2009

50

[IEEE 2013 IEEE 40th International Conference on Plasma Sciences (ICOPS) - San Francisco, CA, USA (2013.06.16-2013.06.21)] 2013 Abstracts IEEE International Conference on Plasma Science (ICOPS) - Design of an advanced modular automated evaluation system for experimental high power Si and SiC SGTOs

Lawson, Kevin, Lacouture, Shelby, Bayne, Stephen, Giesselmann, Michael, O'Brien, Heather, Ogunniyi, Aderinto, Scozzie, Charles J.

Year:

2013

Language:

english

File:

PDF, 98 KB

english, 2013

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